Self-formed liner for interconnect structures

ABSTRACT

An interconnect dielectric material having an opening formed therein is first provided. A surface nitridation process is then performed to form a nitridized dielectric surface layer within the interconnect dielectric material. A metal layer is formed on the nitridized dielectric surface layer and then an anneal is performed to form a metal nitride layer between the metal layer and the nitridized dielectric surface layer. A portion of the originally deposited metal layer that is not reacted with the nitridized dielectric surface is then selectively removed and thereafter an electrical conducting structure is formed directly on the metal nitride layer that is present in the opening.

BACKGROUND

The present application relates to a semiconductor structure and amethod of forming the same. More particularly, the present applicationrelates to an interconnect structure containing a self-formed metalnitride liner located on a nitrogen-enriched dielectric surface of aninterconnect dielectric material layer as well as a method of formingthe same.

Generally, semiconductor devices include a plurality of circuits thatform an integrated circuit (IC) fabricated on a semiconductor substrate.A complex network of signal paths will normally be routed to connect thecircuit elements distributed on the surface of the substrate. Efficientrouting of these signals across the device requires formation ofmultilevel or multilayered schemes, such as, for example, single or dualdamascene wiring structures. The wiring structure, which may also bereferred to as an interconnect structure, typically includes copper, Cu,since Cu based interconnects provide higher speed signal transmissionbetween large numbers of transistors on a complex semiconductor chip ascompared with aluminum, Al, based interconnects.

Within a typical interconnect structure, metal vias run perpendicular tothe semiconductor substrate and metal lines run parallel to thesemiconductor substrate. Further enhancement of the signal speed andreduction of signals in adjacent metal lines (known as “crosstalk”) areachieved in today's IC product chips by embedding the metal lines andmetal vias (e.g., electrical conducting structures) in a dielectricmaterial having a dielectric constant of less than 4.0.

With the continual scaling of the feature sizes, the volume fractionoccupied by a metal liner within an opening used to accommodate anelectrical conducting structure dramatically increases and degrades thecircuit performance. There is thus a need for providing a method tomaximize the electrical conducting structure volume fraction byeliminating or reducing the metal liner from the opening.

SUMMARY

An interconnect dielectric material having an opening formed therein isfirst provided. A surface nitridation process is then performed to forma nitridized dielectric surface layer within the interconnect dielectricmaterial. A metal layer is formed on the nitridized dielectric surfacelayer and then an anneal is performed to form a metal nitride layerbetween the metal layer and the nitridized dielectric surface layer. Aportion of the originally deposited metal layer that is not reacted withthe nitridized dielectric surface is then selectively removed andthereafter an electrical conducting structure is formed directly on themetal nitride layer that is present in the opening.

One aspect of the present application relates to a semiconductorstructure. In one embodiment of the present application, thesemiconductor structure includes an interconnect dielectric materiallayer containing an opening that exposes a nitridized dielectric surfaceof the interconnect dielectric material layer. A metal nitride liner islocated in the opening and is directly contacting the nitridizeddielectric surface of the interconnect dielectric material layer. Anelectrical conducting structure is also located in the opening and isdirectly contacting the metal nitride liner.

In another embodiment of the present application, the semiconductorstructure may include a first interconnect dielectric material layer ofa first nitrogen content and containing a first opening that exposes afirst nitridized dielectric surface of the first interconnect dielectricmaterial layer, the first nitridized dielectric surface having a highernitrogen content than the first nitrogen content of the first dielectricmaterial layer. A second interconnect dielectric material layer of asecond nitrogen content that differs from the first nitrogen content islocated on a surface of the first dielectric material layer, the secondinterconnect dielectric layer contains a second opening that is incommunication with the first opening and that exposes a secondnitridized dielectric surface of the second interconnect dielectricmaterial layer, the second nitridized dielectric surface has a highernitrogen content than the second nitrogen content of the seconddielectric material layer. A first metal nitride liner is located in thefirst opening and directly contacting the first nitridized dielectricsurface, and a second metal nitride liner is located in the secondopening and directly contacting the second nitridized dielectricsurface. An electrical conducting structure is present in the first andsecond openings, wherein a lower portion of the electrical conductingstructure is in the first opening and directly contacting the firstmetal nitride liner, and an upper portion of the electrical conductingstructure is in the second opening and directly contacting the secondmetal nitride liner. Due to the difference in nitrogen content in theoriginal interconnect dielectric material layers, the first and secondmetal nitride liners have different thicknesses.

Another aspect of the present application relates to a method of forminga semiconductor structure. In one embodiment, the method may includeproviding an opening in an interconnect dielectric material layer. Next,a nitridized dielectric surface layer is formed within exposed portionsof the interconnect dielectric material layer. A metal layer is thenformed on the nitridized dielectric surface layer. Next, theinterconnect dielectric material layer containing the nitridizeddielectric surface layer and the metal layer is anneal to provide ametal nitride layer between the nitridized dielectric surface layer anda remaining portion of the metal layer. After annealing, the remainingportion of the metal layer is selectively removed and an electricalconducting structure is formed in the opening and on the metal nitridelayer.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a cross sectional view of an exemplary semiconductor structurein which at least one opening is present in an interconnect dielectricmaterial layer.

FIG. 2 is a cross sectional view of the exemplary semiconductorstructure of FIG. 1 after performing a surface nitridation process toprovide a nitridized dielectric surface layer within the interconnectdielectric material layer.

FIG. 3 is a cross sectional view of the exemplary semiconductorstructure of FIG. 2 after forming a metal layer.

FIG. 4 is a cross sectional view of the exemplary semiconductorstructure of FIG. 3 after performing an anneal to form a metal nitridelayer between a remaining portion of the metal layer and the nitridizeddielectric surface layer.

FIG. 5 is a cross sectional view of the exemplary semiconductorstructure of FIG. 4 after selectively removing the remaining portion ofthe metal layer.

FIG. 6 is a cross sectional view of the exemplary semiconductorstructure of FIG. 5 after forming a layer of a metal or metal alloy andthereafter performing a planarization process.

FIG. 7 is a cross sectional view of another exemplary semiconductorstructure that can be formed utilizing the method of the presentapplication.

DETAILED DESCRIPTION

The present application will now be described in greater detail byreferring to the following discussion and drawings that accompany thepresent application. It is noted that the drawings of the presentapplication are provided for illustrative purposes only and, as such,the drawings are not drawn to scale. It is also noted that like andcorresponding elements are referred to by like reference numerals.

In the following description, numerous specific details are set forth,such as particular structures, components, materials, dimensions,processing steps and techniques, in order to provide an understanding ofthe various embodiments of the present application. However, it will beappreciated by one of ordinary skill in the art that the variousembodiments of the present application may be practiced without thesespecific details. In other instances, well-known structures orprocessing steps have not been described in detail in order to avoidobscuring the present application.

It will be understood that when an element as a layer, region orsubstrate is referred to as being “on” or “over” another element, it canbe directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “beneath” or “under” another element, it can bedirectly beneath or under the other element, or intervening elements maybe present. In contrast, when an element is referred to as being“directly beneath” or “directly under” another element, there are nointervening elements present.

Referring now to FIG. 1, there is illustrated an exemplary semiconductorstructure that can be employed in accordance with an embodiment of thepresent application. The exemplary semiconductor structure shown in FIG.1 includes an interconnect dielectric material layer 12 that is presenton a surface of a substrate 10. At least one opening 14 is present inthe interconnect dielectric material layer 12.

The substrate 10 may be composed of a semiconductor material, aninsulator material, a conductive material or any combination thereof.When the substrate is composed of a semiconductor material, any materialhaving semiconducting properties such as, for example, Si, SiGe, SiGeC,SiC, Ge alloys, III/V compound semiconductors or II/VI compoundsemiconductors, may be used. In addition to these listed types ofsemiconductor materials, the substrate 10 can be a layered semiconductorsuch as, for example, Si/SiGe, Si/SiC, silicon-on-insulators (SOIs) orsilicon germanium-on-insulators (SGOIs). When the substrate 10 iscomposed of a semiconductor material, one or more semiconductor devicessuch as, for example, complementary metal oxide semiconductor (CMOS)devices can be fabricated thereon.

When the substrate 10 is an insulator material, the insulator materialcan be an organic insulator, an inorganic insulator or any combinationthereof including multilayers. When the substrate 10 is a conductivematerial, the substrate 10 may include, for example, polySi, anelemental metal, alloys of elemental metals, a metal silicide, a metalnitride or any combination thereof including multilayers. When thesubstrate 10 is composed of a combination of an insulator material and aconductive material, the substrate 10 may represent an underlyinginterconnect level of a multilayered interconnect structure.

The interconnect dielectric material layer 12 that is employed may becomposed of any interlevel or intralevel dielectric including inorganicdielectrics or organic dielectrics. In some embodiments, theinterconnect dielectric material layer 12 may be composed of a singledielectric material. In other embodiments, the interconnect dielectricmaterial layer 12 may be composed of at least two different dielectricmaterials. In one embodiment, the interconnect dielectric material layer12 may be non-porous. In another embodiment, the interconnect dielectricmaterial layer 12 may be porous. Some examples of suitable dielectricsthat can be used as the interconnect dielectric material layer 12include, but are not limited to, SiO₂, silsesquioxanes, C doped oxides(i.e., organosilicates) that include atoms of Si, C, O and H,thermosetting polyarylene ethers, or multilayers thereof. The term“polyarylene” is used in this application to denote aryl moieties orinertly substituted aryl moieties which are linked together by bonds,fused rings, or inert linking groups such as, for example, oxygen,sulfur, sulfone, sulfoxide, carbonyl and the like.

The interconnect dielectric material layer 12 typically has a dielectricconstant that is about 4.0 or less, with a dielectric constant of about2.8 or less being more typical. All dielectric constants mentionedherein are relative to a vacuum, unless otherwise noted. Thesedielectrics generally have a lower parasitic cross talk as compared withdielectric materials that have a higher dielectric constant than 4.0.The thickness of the interconnect dielectric material layer 12 may varydepending upon the type of dielectric material(s) used. In one example,the interconnect dielectric material layer 12 may have a thickness from50 nm to 1000 nm. Other thicknesses that are lesser than, or greaterthan, the aforementioned thickness range may also be employed in thepresent application for the thickness of the interconnect dielectricmaterial layer 12.

As stated above, at least one opening 14 is present in the interconnectdielectric material layer 12. In one embodiment (and as shown), the atleast opening 14 is formed partially into the interconnect dielectricmaterial layer 14 so as to expose a sub-surface portion of theinterconnect dielectric material layer 14. By “sub-surface” it is meanta surface of a material layer that is present between a topmost surfaceof the material and a bottommost surface of the material. In anotherembodiment (not shown), the at least one opening is formed entirelythrough the interconnect dielectric material layer 12.

The at least one opening 14 that is formed into the interconnectdielectric material layer 12 can be formed utilizing a patterningprocess. In one embodiment, the patterning process may includelithography and etching. The lithographic process includes forming aphotoresist (not shown) atop a material or material stack to bepatterned (i.e., the interconnect dielectric material layer 12),exposing the photoresist to a desired pattern of radiation anddeveloping the exposed photoresist utilizing a conventional resistdeveloper. The photoresist may be a positive-tone photoresist, anegative-tone photoresist or a hybrid-tone photoresist. In someembodiments, a hard mask such as, for example, a layer of silicondioxide and/or silicon nitride, can be interposed between thephotoresist and the interconnect dielectric material layer 12. Theetching process includes a dry etching process (such as, for example,reactive ion etching, ion beam etching, plasma etching or laserablation), and/or a wet chemical etching process. Typically, reactiveion etching is used in providing the at least one opening 14 into atleast the interconnect dielectric material layer 12. In someembodiments, the etching process includes a first pattern transfer stepin which the pattern provided to the photoresist is transferred to thehard mask, the patterned photoresist is then removed by an ashing step,and thereafter, a second pattern transfer step is used to transfer thepattern from the patterned hard mask into the underlying interconnectdielectric material layer 12. When a hard mask is employed, the hardmask is removed after the patterning process utilizing a planarizationprocess or etching.

The depth of the at least one opening 14 that is formed into theinterconnect dielectric material layer 12 (measured from the topmostsurface of the interconnect dielectric material layer 12 to the bottomwall of the at least one opening 14) may vary. The at least one opening14 that is formed into the interconnect dielectric material layer 12 maybe a via opening, a line opening, and/or a combined via/line opening. Inone embodiment, and when a combined via/line opening is formed, a viaopening can be formed first and then a line opening is formed atop andin communication with the via opening. In another embodiment, and when acombined via/line opening is formed, a line opening can be formed firstand then a via opening is formed atop and in communication with the lineopening. In FIG. 1, and by way of an example, the at least one opening14 is shown as a line opening. When a via or line is formed, a singledamascene process (including the above mentioned lithography and etchingsteps) can be employed. When a combined via/line is formed a dualdamascene process (including at least one iteration of the abovementioned lithography and etching steps) can be employed.

Referring now to FIG. 2, there is illustrated the exemplarysemiconductor structure of FIG. 1 after performing a surface nitridationprocess to provide a nitridized dielectric surface layer 16 within theinterconnect dielectric material layer 12. In the illustratedembodiment, the nitridized dielectric surface layer 16 is formed withina topmost surface of the original interconnect dielectric layer 12 andwithin the sidewalls and bottom wall of the interconnect dielectricmaterial 12 exposed by opening 14. The surface nitridation process mayalso be referred to herein as a nitride surface treatment process. Thenitridized dielectric surface layer 16 may also be referred to herein asa nitrogen enriched dielectric surface layer. By “nitrogen enricheddielectric surface layer” it is meant, that the surfaces of theinterconnect dielectric material layer 12 that are exposed to thesurface nitridation process have a higher nitrogen content therein ascompared to the originally deposited interconnect dielectric materiallayer 12. In some embodiments (and as shown), the nitridized dielectricsurface layer 16 is a continuous layer. In other embodiments and whenthe opening 14 extends entirely through the interconnect dielectricmaterial layer 12 (not shown), the nitridized dielectric surface layer16 may be absent from the bottom wall of the opening.

In one embodiment, the surface nitridation process used in forming thenitridized dielectric surface layer 16 is a thermal nitridation process.The thermal nitridation process that is employed in the presentapplication does not include an electrical bias higher than 200 W. Insome embodiments, no electrical bias is performed during the thermalnitridation process. The thermal nitridation process employed in thepresent application is performed in any nitrogen-containing ambient,which is not in the form of a plasma. The nitrogen-containing ambientsthat can be employed in the present application include, but are notlimited to, N₂, NH₃, NH₄, NO, or NH_(x) wherein x is between 0 and 1.Mixtures of the aforementioned nitrogen-containing ambients can also beemployed in the present application. In some embodiments, thenitrogen-containing ambient is used neat, i.e., non-diluted. In otherembodiments, the nitrogen-containing ambient can be diluted with aninert gas such as, for example, He, Ne, Ar and mixtures thereof. In someembodiments, H₂ can be used to dilute the nitrogen-containing ambient.

Notwithstanding whether the nitrogen-containing ambient is employed neator diluted, the content of nitrogen within the nitrogen-containingambient employed in the present application is typically from 10% to100%, with a nitrogen content within the nitrogen-containing ambientfrom 50% to 80% being more typical. In one embodiment, the thermalnitridation process employed in the present application is performed ata temperature from 50° C. to 450° C. In another embodiment, the thermalnitridation process employed in the present application is performed ata temperature from 100° C. to 300° C.

In addition to a thermal nitridation process, the formation of thenitridized dielectric surface layer 16 can include a plasma nitridationprocess. When a plasma nitridation process is employed, an electricalbias of greater than 200 W can be employed. The plasma nitridationprocess is performed by generating a plasma from one of thenitrogen-containing ambients that is mentioned above for the thermalnitridation process. In one embodiment, the plasma nitridation processemployed in the present application is performed at a temperature from50° C. to 450° C. In another embodiment, the plasma nitridation processemployed in the present application is performed at a temperature from100° C. to 300° C.

Notwithstanding the type of surface nitridation employed, the depth ofthe nitridized dielectric surface layer 16 may vary. Typically, thedepth of the nitridized dielectric surface layer 16, as measured fromthe exposed surface of the interconnect dielectric material layer 12inward, is from 0.5 nm to 20 nm, with a depth from 1 nm to 10 nm beingmore typical.

The nitridized dielectric surface layer 16 is composed of a samedielectric material as the interconnect dielectric material layer 12with added nitrogen. In some embodiments, the nitrogen content (which isa combination of added nitrogen plus any nitrogen that may be present inthe interconnect dielectric material layer 12) of the nitridizeddielectric surface layer 16 is 10 atomic percent or greater. In oneembodiment of the present application, the nitrogen content of thenitridized dielectric surface layer 16 can be from 10 atomic percentnitrogen to 50 atomic percent nitrogen. Nitrogen contents of less than10 atomic percent are also contemplated. When the interconnectdielectric material layer 12 includes nitrogen, a nitrogen gradient maybe formed between the nitridized dielectric surface layer 16 and theremaining portion of the interconnect dielectric material layer 12.

The thickness of the nitridized dielectric surface layer 16 is the sameas the depth mentioned above. That is, the nitridized dielectric surfacelayer 16 may, for example, have a thickness from 0.5 nm to 20 nm.

Referring now to FIG. 3, there is illustrated the exemplarysemiconductor structure of FIG. 2 after forming a metal layer 18. Themetal layer 18 is a continuous layer that is formed on the exposedsurface of the nitridized dielectric surface layer 16. The metal layer18 may be composed of Ta, Ti, W, Co, Ru, Ir, Al, Rh or any other metalthat can form a metal nitride. The thickness of the metal layer 18 mayvary depending on the deposition process used as well as the materialemployed. In some embodiments, the metal layer 18 may have a thicknessfrom 1 nm to 50 nm; although other thicknesses for the metal layer 18are contemplated and can be employed in the present application so longas the chosen thickness does not entirely fill the at least one opening14 with the metal layer 18. The metal layer 18 can be formed by adeposition process including, for example, chemical vapor deposition(CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layerdeposition (ALD), physical vapor deposition (PVD), sputtering, chemicalsolution deposition or plating.

Referring now to FIG. 4, there is illustrated the exemplarysemiconductor structure of FIG. 3 after performing an anneal to form ametal nitride layer 20 between a remaining portion of the metal layer 18and the nitridized dielectric surface layer 16. The metal nitride layer20 is formed by annealing the exemplary semiconductor structure shown inFIG. 3 to cause an in-situ reaction between the nitridized dielectricsurface layer 16 and the metal layer 18. During this reaction, nitrogendiffuses from the nitridized dielectric surface layer 16 into the metallayer 18, and the diffused nitrogen reacts with the metal in the metallayer 18 to form the metal nitride layer 20. The nitridized dielectricsurface layer 16, which may have a reduced nitrogen content afterannealing, and a portion of the metal layer 18 remain as shown in FIG.4. The thickness of the remaining portion of the metal layer 18 afterthe anneal is less than the original thickness of the metal layer 18. Insome embodiments, the metal nitride layer 20 has a same nitrogen contentas the nitridized dielectric surface layer 16. The metal nitride layer20 is composed of a same metal as the metal layer 18.

In one embodiment, the annealing is a thermal anneal. The thermal annealmay be performed at a temperature of from 100° C. to 500° C. In oneembodiment, the thermal anneal is performed in an inert gas ambient(i.e., one of Ar, Ne, and/or Xe). In another embodiment, the thermalanneal is performed in a forming gas ambient. The duration of thethermal anneal used in forming the metal nitride layer 20 can vary. Inone example, and within the anneal temperature range mentioned above,the duration of the thermal anneal used in forming the metal nitridelayer 20 can be from 10 minutes to 5 hours. The thermal anneal mayinclude a rapid thermal anneal, and a furnace anneal. In someembodiments, the anneal may include a laser anneal. When a laser annealis performed, the laser anneal may be performed at a temperature from400° C. to 900° C. and for a duration of from 20 nanoseconds to 10minutes. Other laser anneal temperatures and duration times are alsocontemplated for use in the present application.

Referring now to FIG. 5, there is illustrated the exemplarysemiconductor structure of FIG. 4 after selectively removing theremaining portion of the metal layer 18. The removal of the remainingportion of the metal layer 18 is performed utilizing an etching processthat is selective in removing the remaining portion of the metal layer18 relative to the metal nitride layer 20. In one embodiment of thepresent application, the remaining portion of the metal layer 18 can beremoved utilizing a plasma etch. In one example, the plasma etch mayinclude at least one chemical that contains fluorine or chlorine. Inanother embodiment of the present application, the remaining portion ofthe metal layer 18 may be removed utilizing a chemical wet etch process.In one example, an acid such as hydrogen fluoride, hydrogen chloride,sulfuric acid or nitride acid may be used to remove the remainingportion of the metal layer 18.

Referring now to FIG. 6, there is illustrated the exemplarysemiconductor structure of FIG. 5 after forming a layer of a metal ormetal alloy as an electrical conductor and thereafter performing aplanarization process. The layer of metal or metal alloy that can beemployed may include Cu, W, Al or alloys thereof such as, for example, acopper aluminum (Cu—Al) alloy or an aluminum copper (Al—Cu) alloy. Thelayer of metal or metal alloy may be formed by a deposition processincluding chemical vapor deposition (CVD), plasma enhanced chemicalvapor deposition (PECVD), sputtering, chemical solution deposition orplating. In one example, a bottom-up plating process may be used informing the layer metal or metal alloy. The layer of metal or metalalloy is formed upon the exposed surfaces of the metal nitride layer 20.The layer of metal or metal alloy fills the entirety of the remainingvolume of the at least one opening 14 and forms above the topmostsurface of the interconnect dielectric material layer 12.

Following the deposition of the layer metal or metal alloy, aplanarization process such as, for example, chemical mechanicalpolishing (CMP) and/or grinding, can be used to provide the exemplarysemiconductor structure shown in FIG. 6. The planarization process is amaterial removal process that removes all materials that are presentoutside the at least one opening 14 and above the topmost surface of theinterconnect dielectric material layer 12. For example, theplanarization removes a portion of the layer of metal or metal alloy, aportion of the metal nitride layer 20 and a portion of the nitridizeddielectric surface layer 16 that are located outside each opening 14 andabove the topmost surface of the interconnect dielectric material layer12. A portion of the layer of metal or metal alloy, a portion of themetal nitride layer 20, and a portion of the nitridized dielectricsurface layer 16 remain inside each opening 14. The remaining portion ofthe layer of metal or metal alloy is referred to as an electricalconducting structure 22, the remaining portion of the metal nitridelayer 20 is referred as a metal nitride liner 20L, and the remainingportion of the nitridized dielectric surface layer 16 is referred to asa nitridized dielectric surface 16L. In some embodiments, both the metalnitride liner 20L and the nitridized dielectric surface 16L are bothU-shaped. By “U-shaped” it is meant a material that has a horizontalbottom portion and a vertical portion extending from each end of thehorizontal portion. As is shown in FIG. 6, a topmost surface of eachvertical portion of the U-shaped metal nitride liner 20L and eachvertical portion of the U-shaped nitridized dielectric surface 16L iscoplanar with a topmost surface of the electrical conducting structure22 and the topmost surface of the interconnect dielectric material layer12. In some embodiments in which the opening is formed entirely throughthe interconnect dielectric material layer 12, the metal nitride liner20L and the nitridized dielectric surface 16L can be present only on thesidewalls of interconnect dielectric material layer 12 provided byopening 14.

Notably, FIG. 6 illustrates an example semiconductor structure of thepresent application. The exemplary semiconductor structure includes aninterconnect dielectric material layer 12 containing an opening (notspecifically labeled in FIG. 6) that exposes a nitridized dielectricsurface 16L of the interconnect dielectric material layer 12. A metalnitride liner 20L is located in the opening and is directly contactingthe nitridized dielectric surface 16L. An electrical conductingstructure 22 is also located in the opening and is directly contactingthe metal nitride liner 20L.

Referring now to FIG. 7, there is illustrated another exemplarysemiconductor structure that can be formed utilizing the method of thepresent application. In this drawing, reference numeral 10 represents asubstrate, reference numeral 12A represents a first interconnectdielectric material layer having a first nitrogen content, element 12Brepresents a second interconnect dielectric material layer having asecond nitrogen content that differs from the first nitrogen content,element 38L represents a first nitridized dielectric surface (the firstdielectric surface includes a same dielectric material as the firstinterconnect dielectric material 12A with added nitrogen), element 36Lrepresents a second nitridized dielectric surface (the second dielectricsurface includes a same dielectric material as the second interconnectdielectric material 12B with added nitrogen), element 40L denotes afirst metal nitride liner, element 42L represents a second metal nitrideliner, and element 22 represents an electrical conducting structure. Theelectrical conducting structure 22 includes an upper portion located ina second opening formed in the second dielectric material layer 12B, anda lower portion located in a first opening formed in the firstdielectric material layer 12A. In this embodiment, the first and secondopenings are in communication with each other.

Due to the process of the present application, the nitrogen content ofthe first nitridized dielectric surface 38L is greater than the firstnitrogen content of the first interconnect dielectric material layer12A, and the nitrogen content of the second nitridized dielectricsurface 36L is greater than the second nitrogen content of the secondinterconnect dielectric material layer 12B. Moreover, the first metalnitride liner 40L has a first thickness, while the second metal nitrideliner 42L has a second thickness that differs from the first thickness.

In one example (as is shown in FIG. 7) and when the first nitrogencontent is less than the second nitrogen content, the second thicknessof the second metal nitride liner 42L that is formed is greater than thefirst thickness of the first metal nitride liner 40L that is formed. Inanother example (not shown) and when the first nitrogen content isgreater than the second nitrogen content, the second thickness of thesecond metal nitride liner 42L that is formed is less than the firstthickness of the first metal nitride liner 40L that is formed. Thisembodiment illustrates that the thickness of a metal nitride liner thatis formed utilizing the method of the present application is dependenton initial nitrogen content of the interconnect dielectric materiallayer.

FIG. 7 shows another exemplary semiconductor structure of the presentapplication. The exemplary semiconductor structure may include a firstinterconnect dielectric material layer 12A of a first nitrogen contentand containing a first opening that exposes a first nitridizeddielectric surface 38L of the first interconnect dielectric materiallayer 12A, the first nitridized dielectric surface 38L having a highernitrogen content than the first nitrogen content of the first dielectricmaterial layer 12A. A second interconnect dielectric material layer 12Bof a second nitrogen content that differs from the first nitrogencontent is located on a surface of the first dielectric material layer12A, the second interconnect dielectric layer 12B contains a secondopening that is in communication with the first opening and that exposesa second nitridized dielectric surface 36L of the second interconnectdielectric material layer 12B, the second nitridized dielectric surface36L having a higher nitrogen content than the second nitrogen content ofthe second dielectric material layer 12B. A first metal nitride liner40L is located in the first opening and directly contacting the firstnitridized dielectric surface 38L, and a second metal nitride liner 42Lis located in the second opening and directly contacting the secondnitridized dielectric surface 36L. An electrical conducting structure 22is present in the first and second openings, wherein a lower portion ofthe electrical conducting structure 22 is in the first opening anddirectly contacting the first metal nitride liner 40L, and an upperportion of the electrical conducting structure 22 is in the secondopening and directly contacting the second metal nitride liner 42L.

While the present application has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present application. It is therefore intended that the presentapplication not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

What is claimed is:
 1. A semiconductor structure comprising: aninterconnect dielectric material layer having a metal nitride liner andan electrical conducting structure embedded therein, wherein anitridized dielectric surface of the interconnect dielectric material islocated entirely between the metal nitride liner and the interconnectdielectric material layer, and the metal nitride liner is locatedbetween the electrical conducting structure and the nitridizeddielectric surface of the interconnect dielectric material layer.
 2. Thesemiconductor structure of claim 1, wherein the electrical conductingstructure has a topmost surface that is coplanar with a topmost surfaceof each of the metal nitride liner, the nitridized dielectric surfaceand the interconnect dielectric material layer.
 3. The semiconductorstructure of claim 2, wherein the nitridized dielectric surface isU-shaped, and the metal nitride liner is U-shaped.
 4. The semiconductorstructure of claim 1, wherein the nitridized dielectric surface has ahigher nitrogen content than the interconnect dielectric material layer.5. The semiconductor structure of claim 4, wherein the nitridizeddielectric surface comprises a same interconnect dielectric material asthe interconnect dielectric material layer.
 6. The semiconductorstructure of claim 5, wherein the interconnect dielectric material iscomposed of SiO₂, a silsesquioxane, a C doped oxide or a thermosettingpolyarylene ether.
 7. The semiconductor structure of claim 4, whereinthe nitrogen content of the nitridized dielectric surface is 10 atomicpercent or greater.
 8. The semiconductor structure of claim 7, whereinthe nitrogen content of the nitridized dielectric surface is from 10atomic percent to 50 atomic percent.
 9. The semiconductor structure ofclaim 4, wherein the nitrogen content of the nitridized dielectricsurface is less than 10 atomic percent.
 10. The semiconductor structureof claim 1, wherein the metal nitride liner has a same nitrogen contentas the nitridized dielectric surface.
 11. The semiconductor structure ofclaim 10, wherein the metal nitride liner comprises Ta, Ti, W, Co, Ru,Ir, Al or Rh.
 12. The semiconductor structure of claim 1, wherein theelectrical conducting structure comprises Cu, W, Al or alloys thereof.13. The semiconductor structure of claim 1, further comprising asubstrate located beneath the interconnect dielectric material layer.14. The semiconductor structure of claim 13, wherein the substratecomprises a semiconductor material having one or more semiconductordevices located thereon.
 15. The semiconductor structure of claim 1,wherein the interconnect dielectric material layer is composed of aninterconnect dielectric material containing nitrogen, and wherein anitrogen gradient is present between the nitridized dielectric surfaceand the interconnect dielectric material layer.
 16. The semiconductorstructure of claim 15, wherein the nitridized dielectric surface has anitrogen content of 10 atomic percent or greater.
 17. The semiconductorstructure of claim 16, wherein the nitrogen content of the nitridizeddielectric surface is from 10 atomic percent to 50 atomic percent. 18.The semiconductor structure of claim 15, wherein the nitridizeddielectric surface has a nitrogen content of less than 10 atomicpercent.
 19. A semiconductor structure comprising: an interconnectdielectric material layer composed of an interconnect dielectricmaterial and having a metal nitride liner and an electrical conductingstructure embedded therein, wherein a nitridized dielectric surface ofthe interconnect dielectric material is located entirely between themetal nitride liner and the interconnect dielectric material layer, andthe metal nitride liner is located between the electrical conductingstructure and the nitridized dielectric surface of the interconnectdielectric material, and further wherein the electrical conductingstructure has a topmost surface that is coplanar with a topmost surfaceof each of the metal nitride liner, the nitridized dielectric surfaceand the interconnect dielectric material layer, and the nitridizeddielectric surface is composed of the interconnect dielectric materialwith added nitrogen.
 20. The semiconductor structure of claim 19,wherein the metal nitride liner has a same nitrogen content as thenitridized dielectric surface.